Nd:GdVO4

Products > laser crystal > Nd:GdVO4

Nd:GdVO4

Nd:GdVO4 is one of the most efficient laser host crystals currently existing for diode pumped configuration . Its large stimulated emission cross-section at lasing wavelength, high absorption coefficient and wide absorption bandwidth at pump wavelength, good thermal conductivity, high laser induced damage threshold as well as good physical, optical and mechanical properties make Nd:GdVO4 an excellent crystal for high power, stable and cost-effective diode pumped solid-state lasers.

Advantages:

◆ Good Thermal Conductivity

◆ Lower lasing threshold and higher slope efficiency

◆ Large stimulated emission cross-section at lasing wavelength

◆ High absorption over a wide pumping wavelength bandwidth

◆ Low dependency on pumping wavelength and tend to single mode output

◆ Optically uniaxial and large birefringence emit strongly-polarized laser

Nd:GdVO4 crystals is the idle substitute of the Nd:YAG and Nd:YVO4 crystals for the high power DPSS laser. Comparing with Nd:YVO4, Nd:GdVO4 has good thermal conductivity and can offer better property to get high power output . Comparing with the Nd:YAG, Nd:GdVO4 has higher a lot slope efficiency, the more compact design can be available.

With advanced technology on growing high optical quality and large size Nd:GdVO4 crystals, NEWPHOTONS steadily provides as large as f25 x 40 ~ 60 mm3 Nd:GdVO4 bulk crystal, Now, NEWPHOTONS massively produces and provides high quality Nd:GdVO4 crystals at very competitive prices

Basic Properties:


Chemical Formula

Gd.99Nd.01VO4

Dopant Concentration Nd3+, at.%

1.0± 0.1

Crystal Structure

tetragonal

Space Group

I41/amd

Lattice Parameter (A) a=
b=

7.21
6.35

Optical properties


Lasing Transition

4F3/2 - 4I11/2

Lasing Wavelength, nm

1062.9

Emission Cross Section, (E ½ ½ c, at 1064 nm) cm2

7.6x10-19

Absorption Cross Section, (E ½ ½ c, at 808 nm) cm2

4.9x10-19

Absorption Coefficient, (E ½ ½ c, at 808 nm) cm-1

74

Index of Refraction (at 1064 nm): no=
ne=

1.972
2.192

Thermal Conductivity, W/(mxK): <110>

11.7

Density, g/cm3

5.47


 Standard Specs. of Nd:GdVO4

Nd: Dopant Level

1.0 atm% , 0.5%

Standard Dimensions

4x4x8mm,3x3x5mm3, 3x3x3 mm3, 3x3x1 mm3

Wavefront Distortion

< l/8 at 633 nm

Scattering Sites

invisible, probed with a He-Ne laser

Orientation

+/-0.5deg.

Dimensional Tolerance

+0.1/-0.1

End-faces Configuration

Plano/Plano

Surface quality

10/5 Scratch/Dig per MIL-O-13830B

Flatness

l/10 at 633 nm

Clear Aperture

> Central 90%

Parallelism

< 10 arc sec.

The other doping Nd:GdVO4 crystals are available too

 Standard product

Part No.

Doping

Dimension

Coating

NGV0101

1%

3x3x1mm

HR/AR Coating

NGV0102

1%

3x3x1mm

AR/AR Coating

NGV0103

1%

3x3x3mm

AR/AR Coating

NGV0104

1%

3x3x5mm

AR/AR Coating

NGV0105

0.5%

3x3x5mm

AR/AR Coating

NGV0106

0.5%

3x3x7mm

AR/AR Coating

NGV0107

0.5%

3x3x10mm

AR/AR Coating

NGV0108

0.3%

4x4x8mm

AR/AR Coating

NGV0109

0.3%

4x4x10mm

AR/AR

HR/AR Coating:S1: HR@1064nm&532nm HT@808nm S2: AR@1064nm&532nm

AR/AR Coating: S1: AR@1064nm&532nm HT@808nm S2: AR@1064nm &532nm

Note: The other specification of Nd:GdVO4 crystals and coating are available upon request.


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